Shim, Joonsup Lim, Jinha Geum, Dae-Myeong You, Jong-Bum Yoon, Hyeonho Kim, Joon Pyo Baek, Woo Jin Han, Jae-Hoon Kim, SangHyeon 2024-01-12T04:08:40Z 2024-01-12T04:08:40Z 2022-07-15 2021 2380-9248 https://pubs.kist.re.kr/handle/201004/77783 We experimentally demonstrate an on-chip optical power monitoring at the wavelength range of 1520-1600 nm using the waveguide bolometric detector with a TiOx/Ti/TiOx tri-layer film based on the silicon-on-insulator (SOT) platform. For the light absorption causing a heat generation, a heavily-doped (n(+)) Si waveguide is adopted to utilize the mechanism of free-carrier absorption (FCA), and Au strip is deposited onto the n(+) Si waveguide to further enhance the light absorption. A bolometric material of TiOx/Ti/TiOx tri-layer film is integrated for the thermal-to-electrical conversion. As a result, it exhibits the record-high temperature coefficient of resistance of -2.296 %/K with the record-high maximum sensitivity of -46.45 %/mW among waveguide bolometers. This work demonstrates the waveguide bolometric detector with the FCA effect, for the first time to our knowledge, which can be simply extended for the operation wavelength range to the molecular-fingerprint regions (2-20 mu m) for bio and chemical sensing. English IEEE TiOx/Ti/TiOx Tri-layer Film-based Waveguide Bolometric Detector for On-Chip Si Photonic Sensors Conference 10.1109/IEDM19574.2021.9720594 2 IEEE International Electron Devices Meeting (IEDM) IEEE International Electron Devices Meeting (IEDM) US San Francisco, CA 2021-12-11 2021 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) 000812325400096