<?xml version="1.0" encoding="utf-8" standalone="no"?>
<dublin_core schema="dc">
<dcvalue element="contributor" qualifier="author">Hwang,&#x20;Yaelim</dcvalue>
<dcvalue element="contributor" qualifier="author">Yim,&#x20;Haena</dcvalue>
<dcvalue element="contributor" qualifier="author">Oh,&#x20;Kwanyoung</dcvalue>
<dcvalue element="contributor" qualifier="author">Park,&#x20;Jiseul</dcvalue>
<dcvalue element="contributor" qualifier="author">Kim,&#x20;So&#x20;Hee</dcvalue>
<dcvalue element="contributor" qualifier="author">Jang,&#x20;Ho-Won</dcvalue>
<dcvalue element="contributor" qualifier="author">Choi,&#x20;Ji&#x20;Won</dcvalue>
<dcvalue element="date" qualifier="accessioned">2024-01-12T06:34:45Z</dcvalue>
<dcvalue element="date" qualifier="available">2024-01-12T06:34:45Z</dcvalue>
<dcvalue element="date" qualifier="created">2023-08-14</dcvalue>
<dcvalue element="date" qualifier="issued">2023-08</dcvalue>
<dcvalue element="identifier" qualifier="issn">1359-8368</dcvalue>
<dcvalue element="identifier" qualifier="uri">https:&#x2F;&#x2F;pubs.kist.re.kr&#x2F;handle&#x2F;201004&#x2F;79860</dcvalue>
<dcvalue element="description" qualifier="abstract">Silicon&#x20;nitride-based&#x20;electrodes&#x20;(SiNx),&#x20;have&#x20;been&#x20;proposed&#x20;as&#x20;promising&#x20;candidates&#x20;for&#x20;high-capacity&#x20;transparent&#x20;anode&#x20;electrodes&#x20;in&#x20;earlier&#x20;studies.&#x20;Unfortunately,&#x20;they&#x20;have&#x20;low&#x20;electrical&#x20;conductivity,&#x20;resulting&#x20;in&#x20;some&#x20;disadvantages&#x20;such&#x20;as&#x20;power&#x20;density&#x20;for&#x20;application&#x20;in&#x20;thin&#x20;film&#x20;batteries.&#x20;To&#x20;improve&#x20;electrical&#x20;conductivity,&#x20;bulk&#x20;batteries&#x20;use&#x20;conductive&#x20;carbon&#x20;additives,&#x20;which&#x20;also&#x20;impair&#x20;transmittance.&#x20;Thus,&#x20;we&#x20;conducted&#x20;this&#x20;research&#x20;to&#x20;enhance&#x20;the&#x20;electrochemical&#x20;properties&#x20;by&#x20;improving&#x20;the&#x20;conductivity&#x20;without&#x20;compromising&#x20;the&#x20;transmittance&#x20;by&#x20;uniformly&#x20;dispersed&#x20;Ag&#x20;nanoparticles&#x20;in&#x20;SiNx&#x20;thin&#x20;film.&#x20;We&#x20;obtained&#x20;an&#x20;Ag-SiNx&#x20;composite&#x20;thin-film&#x20;anode&#x20;via&#x20;continuous&#x20;composition&#x20;spread&#x20;sputtering&#x20;and&#x20;investigated&#x20;the&#x20;effect&#x20;of&#x20;the&#x20;Ag&#x20;concentration.&#x20;The&#x20;capacity&#x20;of&#x20;the&#x20;thin-film&#x20;battery&#x20;raised&#x20;to&#x20;242.8&#x20;μAh&#x2F;cm2·μm&#x20;with&#x20;Ag0.236SiO0.7N&#x20;anode&#x20;compared&#x20;to&#x20;the&#x20;SiO0.7N&#x20;anode&#x20;which&#x20;had&#x20;a&#x20;capacity&#x20;of&#x20;37.2&#x20;μAh&#x2F;cm2·μm.&#x20;In&#x20;addition,&#x20;while&#x20;SiO0.7N&#x20;was&#x20;operated&#x20;only&#x20;up&#x20;to&#x20;2&#x20;C,&#x20;Ag0.236SiO0.7N&#x20;has&#x20;driven&#x20;up&#x20;to&#x20;5&#x20;C&#x20;and&#x20;10&#x20;C,&#x20;which&#x20;are&#x20;high&#x20;C&#x20;rates,&#x20;was&#x20;also&#x20;possible.&#x20;AgxSiO0.7N&#x20;thin&#x20;film&#x20;with&#x20;less&#x20;than&#x20;0.236&#x20;mol&#x20;content&#x20;demonstrates&#x20;an&#x20;optical&#x20;transmittance&#x20;of&#x20;over&#x20;60%&#x20;in&#x20;the&#x20;visible&#x20;area.&#x20;These&#x20;results&#x20;indicate&#x20;that&#x20;improving&#x20;the&#x20;electrical&#x20;conductivity&#x20;by&#x20;the&#x20;addition&#x20;of&#x20;an&#x20;Ag&#x20;during&#x20;the&#x20;silicon&#x20;nitride&#x20;deposition&#x20;can&#x20;increase&#x20;its&#x20;electrochemical&#x20;performance&#x20;while&#x20;maintaining&#x20;its&#x20;applicability&#x20;to&#x20;transparent&#x20;batteries.</dcvalue>
<dcvalue element="language" qualifier="none">English</dcvalue>
<dcvalue element="publisher" qualifier="none">Pergamon&#x20;Press&#x20;Ltd.</dcvalue>
<dcvalue element="title" qualifier="none">Highly&#x20;conductive&#x20;Ag-SiNx&#x20;composite&#x20;thin&#x20;film&#x20;anode&#x20;engineering&#x20;for&#x20;transparent&#x20;battery</dcvalue>
<dcvalue element="type" qualifier="none">Article</dcvalue>
<dcvalue element="identifier" qualifier="doi">10.1016&#x2F;j.compositesb.2023.110829</dcvalue>
<dcvalue element="description" qualifier="journalClass">1</dcvalue>
<dcvalue element="identifier" qualifier="bibliographicCitation">Composites&#x20;Part&#x20;B:&#x20;Engineering,&#x20;v.262</dcvalue>
<dcvalue element="citation" qualifier="title">Composites&#x20;Part&#x20;B:&#x20;Engineering</dcvalue>
<dcvalue element="citation" qualifier="volume">262</dcvalue>
<dcvalue element="description" qualifier="isOpenAccess">Y</dcvalue>
<dcvalue element="description" qualifier="journalRegisteredClass">scie</dcvalue>
<dcvalue element="description" qualifier="journalRegisteredClass">scopus</dcvalue>
<dcvalue element="identifier" qualifier="wosid">001053695200001</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Engineering,&#x20;Multidisciplinary</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Materials&#x20;Science,&#x20;Composites</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Engineering</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Materials&#x20;Science</dcvalue>
<dcvalue element="type" qualifier="docType">Article</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">LITHIUM-ION&#x20;BATTERIES</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">ELECTRICAL-PROPERTIES</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">RATE-CAPABILITY</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">SILICON&#x20;ANODE</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">NANOPARTICLES</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">Transparent</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">Solid&#x20;state</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">Anode</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">Reactive&#x20;sputtering</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">Lithium&#x20;thin-film&#x20;battery</dcvalue>
</dublin_core>
