Pietryga, J.M. Baea, W.K. Parka, Y.-S. Robel, I. Klimov, V.I. 2024-01-12T06:53:36Z 2024-01-12T06:53:36Z 2022-03-07 2015-05 1938-5862 https://pubs.kist.re.kr/handle/201004/80278 Despite tremendous progress since the first demonstration of QDbased light-emitting diodes (QD-LEDs) there is substantial room for improvement in performance, particularly at high current densities. Here we analyze the role of Auger recombination in the performance of QD-LEDs by conducting a systematic characterization of device performance in conjunction with timeresolved spectroscopic studies of photoexcited carriers directly within the device structure. We use a series of structurally engineered core/shell QDs that exhibit very similar single-exciton properties, but distinctly different rates of non-radiative Auger recombination to show that both QD-LED efficiency and the onset for efficiency roll-off are strongly influenced by Auger recombination. Finally, we demonstrate that device efficiency can be improved by either reducing Auger recombination rates, or by improving charge-injection balance, both of which can be accomplished through engineering of the QD structure. ？ 2014 by The Electrochemical Society. English Electrochemical Society Inc. Improving the performance of quantum dot light-emitting diodes through nanoscale engineering Conference 10.1149/06105.0075ecst 1 International Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 4 - 225th ECS Meeting, pp.75 - 85 International Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 4 - 225th ECS Meeting 75 85 US Orlando, Florida 2015-05-11 ECS Transactions 2-s2.0-84925081666