Min, B.-C. Shin, I.-J. Choi, G.-M. Ahn, C. Langer, J. Ocker, B. Maass, W. Shin, K.-H. 2024-01-12T07:21:32Z 2024-01-12T07:21:32Z 2022-03-07 2010-08 0000-0000 https://pubs.kist.re.kr/handle/201004/80831 We illuminate how the tunnel magnetoresistance (TMR) of MgO-based magnetic tunnel junctions (MTJs) is affected by the structure, materials, and fabrication processes. First, we demonstrate a possibility to control detrimental diffusions by separating a step for obtaining a grain-to-grain epitaxy in CoFeB/MgO/CoFeB layers from a step for achieving a high exchange-bias field in the pinned layer. A high TMR and large exchange-bias field can be obtained simultaneously by circumventing Mn diffusion and minimizing Ru diffusion during the annealing process at high temperature. Second, we show that the MTJs consisting of CoFeB/ MgO/ CoFeB/ Ru/ ferromagnet (FM), where FM is Co, Ni, NiFe, CoFe, or CoFeB, can provide a reasonably high TMR and decent thermal stability, presumably useful for the memory applications. ？2010 IEEE. English IEEE MgO-based magnetic tunnel junctions for spin-transfer-torque random access memory Conference 10.1109/NANO.2010.5697730 1 2010 10th IEEE Conference on Nanotechnology, NANO 2010, pp.144 - 147 2010 10th IEEE Conference on Nanotechnology, NANO 2010 144 147 KO Ilsan, Gyeonggi-Do 2010-08-17 2010 10th IEEE Conference on Nanotechnology, NANO 2010 2-s2.0-79951824886