Lee, Joong Kee Kim Jung sub 변동진 2024-01-12T07:23:04Z 2024-01-12T07:23:04Z 2021-09-29 2009-10-04 https://pubs.kist.re.kr/handle/201004/80905 The properties of semi-conductive silicon thin films (n-type and p-type silicon) deposited by radio frequency coupled plasma enhanced chemical vapor deposition (rfpecvd) on copper foil were studied using scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and electrochemical measurements. The charge/discharge tests revealed that the n-type silicon thin film electrode shows a stable cyclic performance after the 40th cycle and it maintains a reversible specific capacity of about 2500 mAh/g. The excellent electrochemical performance of the doped silicon anode was attributed to the enhancement of its electrical conductivity, which was further confirmed by impedance spectroscopy and surface analysis by XPS. English PECVD Silcon Anode LIB Preparation of Silicon Thin Film by Plasma Enhanced Chemical vapor Deposition as a High Capacity Anode for Lithium Polymer Batteries Conference 1 216th Electrocehmical society meeting, pp.318 216th Electrocehmical society meeting 318 318 US Vienna, Austria 2009-10-04