Bae, H.C. Park, H.L. You, Y.C. Han, I.K. Kim, J.S. 2024-01-12T07:26:23Z 2024-01-12T07:26:23Z 2022-03-07 2008-05 1862-6351 https://pubs.kist.re.kr/handle/201004/81059 We compared the superluminescent diodes (SLDs) of two types in order to see the effect of embedding another quantum dots (QDs) layer. The insertion of another QDs layer showed a new possibility for a wider spectrum. In addition, through comparing two kinds of SLD structures, the peak positions of the ground state and excited state were observed to be affected differently by band-filling, thermal effect, and the overlap of tails of excited state (ES) gain, according to the wafer structure, and the effect of the cap layer is superior to the carrier non-uniformity. We also revealed the temperature sensitivity of carriers in QDs through measuring characteristic temperature. ？ 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. English Characteristics of chirped quantum dot superluminescent diodes Conference 10.1002/pssc.200880641 1 5th International Conference on Semiconductor Quantum Dots, QD 2008, pp.932 - 935 5th International Conference on Semiconductor Quantum Dots, QD 2008 932 935 GE Gyeongju 2008-05-11 Physica Status Solidi (C) Current Topics in Solid State Physics 2-s2.0-70349434007