Lee, B.C. Lee, J.O. Choi, Y.-K. Yoon, J.-B. 2024-01-12T07:53:46Z 2024-01-12T07:53:46Z 2022-03-07 2007-05 0000-0000 https://pubs.kist.re.kr/handle/201004/81471 This work reports a top-down fabrication method to pattern and form carbon nanotube(CNT) interconnects with Cu encapsulation. The fabrication process includes 3 conventional semiconductor processes, which are photolithography, stencil print, and electroplating. Using this method, we fabricated spiral Cu-encapsulated CNT inductors for RF ICs. We measured the inductance of 0.55nH, the quality(Q-) factor of 66 at 8.5GHz from the rectangular type, and the inductance of 0.6nH, the Q-factor of 55 at 8.4GHz from the circular type. These measurement values exceed the inductance and Q-factor of conventional Cu line inductors of which a conventional simulator, HFSS, is used to verify the performance. English Nano Science and Technology Institute Fabrication of Cu-encapsulated carbon nanotube inductors Conference 1 2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, pp.45 - 48 2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007 45 48 US Santa Clara, CA 2007-05-20 2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings 2-s2.0-34548046745