Jae, H.C. Woo, Deok Ha Jung, Mi Keunjoo, K. 2024-01-12T07:55:26Z 2024-01-12T07:55:26Z 2022-03-01 2006-10 0000-0000 https://pubs.kist.re.kr/handle/201004/81546 Two-dimensional photonic crystals were fabricated by a two-step anodization of the deposited Al layer on p-GaN surface of InGaN/GaN multi-quantum-well light-emitting-diode structures. Alumina hole arrays with nanometer-scale dimensions enhance the photoluminescence intensity up to three times. The GaN photonic crystals formed by dry etching process also provide the enhancement of light extraction. English IEEE The nanophotonic crystals of anodic alumina deposited on InGaN/GaN quantum well structures Conference 10.1109/NMDC.2006.4388751 1 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, pp.328 - 329 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC 328 329 US Gyeongju 2006-10-22 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC 2-s2.0-50249086876