Choi, Kyoung Sun Byun, Young Tae Song, Jong Han Lee, S. Woo, Deok Ha Kim, Sun Ho Jhon, Young Min Park, J. 2024-01-12T07:56:31Z 2024-01-12T07:56:31Z 2022-03-07 2006-07 0000-0000 https://pubs.kist.re.kr/handle/201004/81596 Ion implantation-induced quantum well intermixing (QWI) of InGaAs/InGaAsP quantum well structure has shown to be an efficient way to fabricate photonic integrated circuits. We investigate the characteristics of a newly developed QWI with two-step thermal treatments. ？2006 OSIA. English IEEE Study of integrated multiple-wavelength quantum well laser structures using QWI Conference 10.1109/COINNGNCON.2006.4454560 1 COIN-NGNCON 2006 - The Joint International Conference on Optical Internet and Next Generation Network, pp.244 - 246 COIN-NGNCON 2006 - The Joint International Conference on Optical Internet and Next Generation Network 244 246 US Jeju 2006-07-09 COIN-NGNCON 2006 - The Joint International Conference on Optical Internet and Next Generation Network 2-s2.0-50149115963