Choi, Y. Yoon, S.-S. Choi, J. Kim, H.J. Son, J.H. Kim, S. Lee, Y.H. Choi, Y.H. Kim, S.T. Kim, I.-D. Lim, M. 2024-01-12T07:56:47Z 2024-01-12T07:56:47Z 2022-03-07 2006-06 0097-966X https://pubs.kist.re.kr/handle/201004/81608 We recently developed room-temperature deposited pyrochlore-structure Bi1.5,Zn1.0Nb1.5O7 (BZN) insulator having the high dielectric constant (ε=50) and low leakage current. Using the high-K BZN film as a gate insulator, we fabricated pentacene OTFTs operating at low voltage. We fabricated 12 × 12 OTFT-driven OLED. We are integrating the OLED array with the low-voltage high-K pentacene OTFT. English Society for Information Display Low-voltage pentacene OTFTs with high-K gate dielectric and its application to AMOLED Conference 10.1889/1.2433174 1 44th International Symposium, Seminar, and Exhibition, SID 2006, pp.112 - 115 44th International Symposium, Seminar, and Exhibition, SID 2006 112 115 US San Francisco, CA 2006-06-04 Digest of Technical Papers - SID International Symposium 2-s2.0-34547550136