Chin, B.D. Lee, S.-H. Kim, J.K. Lee, S.T. 2024-01-12T08:15:42Z 2024-01-12T08:15:42Z 2022-03-07 2005-10 0000-0000 https://pubs.kist.re.kr/handle/201004/81971 We have controlled doping profile and layered structure of electrophosphorescent device system for enhanced efficiency and lifetime. Power efficiency was improved dramatically only by the doping profile change at emission layer. Proposed mechanism was further confirmed by use of different hole blockers. We explained underlying physical mechanism of device by the charge trapping and energy level alignment. English Highly efficient electrophosphorescent device with controlled doping profile Conference 1 Second Americas Display Engineering and Applications Conference, ADEAC 2005, pp.195 - 198 Second Americas Display Engineering and Applications Conference, ADEAC 2005 195 198 US Portland, OR 2005-10-25 Proceedings of the Second Americas Display Engineering and Applications Conference, ADEAC 2005 2-s2.0-33644773666