Nam, H. Song, J. Choi, W. Lee, J. Yang, H. Zhang, B. Lu, W. 2024-01-12T08:15:46Z 2024-01-12T08:15:46Z 2022-03-07 2005-10 0000-0000 https://pubs.kist.re.kr/handle/201004/81974 In this paper, we report 21 μm photoresponse with InAs/InGaAs/GaAs quantum-dot-in-a-well photodetector structure. The self-assembled InAs quantum dots were grown on InGaAs/GaAs well structure via atomic layer molecular beam epitaxy and fabricated as intersubbamd photoconductlve structure. The far-infrared/THz 21 μm photoresponse was measured at 4.2K. Photoresponses were observed over the range of λ = 3 μm to 25μm with peaks at 21, 15, 8 μm, respectively. English MWP Far-infrared/THz photodetector with self-assembled Quantum dots Conference 1 International Topical Meeting on Microwave Photonics, MWP 2005, pp.289 - 292 International Topical Meeting on Microwave Photonics, MWP 2005 289 292 US Seoul 2005-10-12 International Topical Meeting on Microwave Photonics, MWP 2005 2-s2.0-33847161233