Choi, W.-K. Kim, D.-G. Choi, Y.-W. Lee, S. Woo, D.-H. Byun, Y.-T. Kim, S.-H. 2024-01-12T08:18:33Z 2024-01-12T08:18:33Z 2022-03-07 2004-11 0277-786X https://pubs.kist.re.kr/handle/201004/82100 We present the first demonstration of the vertical-injection depleted optical thyristor-laser diode (VIDOT-LD) with InGaAs/InGaAsP multiple quantum well structure. The VIDOT-LD using the vertical-injection structure shows very good isolation between input and output signal. For the faster switching speed and the lower power consumption, we optimized the structure of a fully depleted optical thyristor (DOT) by the depletion of charge at the lower negative voltage. The measured switching voltage and current are 3.36 V and 10 μA respectively. The holding voltage and current are respectively 1.37 V and 100 μA. The lasing threshold current is 131 mA at 25°C. The output peak wavelength is 1570 nm at a bias current of 1.22 Ith, and there is no input signal. English International Society for Optical Engineering Vertical-injection depleted optical thyristor laser diode with InGaAs/InGaAsP MQW structure Conference 10.1117/12.576767 1 Semiconductor Lasers and Applications II, pp.359 - 366 Semiconductor Lasers and Applications II 359 366 US Beijing 2004-11-08 Proceedings of SPIE - The International Society for Optical Engineering 2-s2.0-18944383254