Hwang, W.J. Lee, H.J. Lee, K.I. Lee, J.M. Chang, J.Y. Han, S.H. Kim, Y.K. Lee, W.Y. Shin, M.W. 2024-01-12T08:44:45Z 2024-01-12T08:44:45Z 2022-03-07 2003-11 0255-5476 https://pubs.kist.re.kr/handle/201004/82603 The spin transport in a lateral spin-injection device with an FeCo/Si/FeCo junction has been investigated. Magnetoresistance (MR) signals were found to appear at low magnetic fields in the range 4 - 300 K. This is attributable to the switching of the magnetization of the two ferromagnetic contacts in the device for certain magnetic fields over which the magnetization in one contact is aligned antiparallel to that in the other. Our results suggest that the spin-polarized electrons are injected from the first contact and, after propagating through the bulk Si, are collected by the second contact. English Materials Research Society of Korea Magnetotransport properties in a lateral spin-injection device with an ferromagnetic/Si/ferromagnetic junction Conference 1 Designing, Processing and Properties of Advanced Engineering Materials: Proceedings on the 3rd International Symposium on Designing, Processing and Properties of Advanced Engineering Materials, pp.1081 - 1084 Designing, Processing and Properties of Advanced Engineering Materials: Proceedings on the 3rd International Symposium on Designing, Processing and Properties of Advanced Engineering Materials 1081 1084 KO Jeju Island 2003-11-05 Materials Science Forum 2-s2.0-18544393955