Park, Y.-K. Kim, Y.-K. Kim, C.-J. Ju, B.-K. Park, J.-O. 2024-01-12T08:47:10Z 2024-01-12T08:47:10Z 2022-03-07 2003-06-06 0000-0000 https://pubs.kist.re.kr/handle/201004/82714 In this paper, we report a novel RF-MEMS packaging technology with lightweight, small size, and short electric path length. To achieve this goal, we used the ultra thin silicon substrate as a packaging substrate. The via holes for vertical feed-through were fabricated on the thin silicon wafer by wet chemical processing. Then, via holes were filled and micro-bumps were fabricated by electroplating. To make up hermetic sealing, metal bonding (Au/Sn-Au) was used in the sealing line. Bonding strength after dipping in the water was about 60Mpa and there was no change. The packaged RF device has a reflection loss under -19 [dB] and a insertion loss of -0.54∼-0.67 [dB]. These measurements show that we could package the RF device without loss and interference by using the vertical feed-through. Specially, with the ultra thin silicon wafer we can realize of a device package that has low-cost, lightweight and small size. Also, we can extend a 3-D packaging structure by stacking assembled thin packages. ？ 2003 IEEE. English Institute of Electrical and Electronics Engineers Inc. Innovation ultra thin packaging for RF-MEMS devices Conference 10.1109/SENSOR.2003.1215621 1 12th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2003 - Digest of Technical Papers, pp.903 - 906 12th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2003 - Digest of Technical Papers 903 906 US Boston 2003-06-08 TRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers 2-s2.0-84944740014