Kim, D. Lee, H. Choi, W. Choi, Y. Lee, S. Woo, D. Byun, Y. Kim, J. Kim, S. Nakano, Y. 2024-01-12T09:11:46Z 2024-01-12T09:11:46Z 2022-03-07 2003-03 0000-0000 https://pubs.kist.re.kr/handle/201004/83093 The waveguide-type depleted optical thyristor laser diode with InGaAs/InGaAsP MQW structure was demonstrated. To increase the efficiency of optical emission the single quantum well undoped laser was incorporated in the active layer of the WDOT-LD, to gave lasing characteristics at a wavelength of 1.5μM. The waveguide-type PnnN optical thyristors showed the nonlinear s-shape I-V and lasing characteristics. The lasing threshold current at 25°C and 10°C were 111 mA and 72.5 mA. English Lasing Characteristics of Optical Thyristor for Optical Logic Function Conference 1 Optical Fiber Communication Conference (OFC), pp.80 - 82 Optical Fiber Communication Conference (OFC) 80 82 US Atlanta, Georgia 2003-03-23 Conference on Optical Fiber Communication, Technical Digest Series 2-s2.0-12144289220