Choi, W.-K. Kim, D.G. Choi, Y.W. Lee, S. Woo, D.H. Byun, Y.T. Kim, J.H. Kim, S.H. 2024-01-12T09:12:00Z 2024-01-12T09:12:00Z 2022-03-07 2003-01 0277-786X https://pubs.kist.re.kr/handle/201004/83104 For the faster switching speed and the lower power consumption, we optimized the structure of a fully depleted optical thyristor (DOT) by the depletion of charge at the lower negative voltage. The fabricated optical thyristor shows sufficient nonlinear s-shape I-V characteristics with the switching voltage of 2.85 V and the complete depletion voltage of -8.73 V. In this paper, using a finite difference method (FDM), we calculate the effects of parameters such as doping concentration and thickness of each layer to determine the optimized structure in the view of the fast and low-power-consuming operation. English International Society for Optical Engineering Reverse-Biased Characteristics of GaAs/AlGaAs Depleted Optical Thyristor with Low Depletion Voltage Conference 10.1117/12.478321 1 SPIE - The International Society for Optical Engineering: Physics and Simulation of Optoelectronic Devices XI, pp.180 - 189 SPIE - The International Society for Optical Engineering: Physics and Simulation of Optoelectronic Devices XI 180 189 US San Jose, CA 2003-01-27 Proceedings of SPIE - The International Society for Optical Engineering 2-s2.0-0242693159