Choi, Won Jun 2024-01-12T10:10:26Z 2024-01-12T10:10:26Z 2022-01-14 2000-10-01 https://pubs.kist.re.kr/handle/201004/84325 Dependence of the intermixing of InGaAs/InGaAsP quantum well in impurity free vacancy disordering on the NH3 flow rate for the growth of SiNx capping Conference 1 미국, pp.0 미국 0 0 American Physical Society meeting - 직접입력