Hyon, C.K. Choi, S.C. Song, S.-H. Hwang, S.W. Min, B.D. Ahn, D. Park, Y.J. Kim, E.K. 2024-01-12T10:11:03Z 2024-01-12T10:11:03Z 2022-03-07 2000-07 0000-0000 https://pubs.kist.re.kr/handle/201004/84354 Fabrication of semiconductor quantum dots is of considerable importance for the study of low dimensional physics and for device applications. The growth of self-assembled quantum dots (SAQDs) in the Stranski-Krastanow mode has been attracting considerable interest, because direct one-step formation of ultra-small quantum dots is possible. Recently, many interesting works demonstrate selective growth of such SAQDs utilizing pre-patterned substrates. We have proposed and demonstrated simple nano-carving of GaAs substrates using the cantilever oscillations of an atomic force microscope (AFM). In the conference, we would like to present selective growth of InAs SAQDs on GaAs substrates, which are patterned by our AFM nano-carving technique. We will show that the position control of SAQDs is successfully obtained by adjusting the shape and the size of the AFM patterns. English Institute of Electrical and Electronics Engineers Inc. Selective growth of InAs quantum dots using AFM-patterned GaAs substrate Conference 10.1109/IMNC.2000.872736 1 International Microprocesses and Nanotechnology Conference, MNC 2000, pp.244 - 245 International Microprocesses and Nanotechnology Conference, MNC 2000 244 245 US Tokyo, Japan 2000-07-11 Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000 2-s2.0-84951917554