Lee, Seok 2024-01-12T10:11:23Z 2024-01-12T10:11:23Z 2022-01-14 2000-06-14 https://pubs.kist.re.kr/handle/201004/84370 Dependence of the intermixing of InGaAs/InGaAsP quantum well in impurity free vacancy disordering on the NH3 flow rate for the growth of SiNX capping layer Conference 1 , pp.36 - 0 36 0 APS meeting 2000