박동균 Park, J.-W. Cheong, D.-S. Lee, J.-K. 2024-01-12T10:12:23Z 2024-01-12T10:12:23Z 2022-02-28 2000-01 0000-0000 https://pubs.kist.re.kr/handle/201004/84416 Pb(Mg1/3Nb2/3)O3-PbTiO3 [PMN-PT] films were deposited by the radio-frequency (r.f.) magnetron sputtering technique and post-annealed. The growth of PMN-PT films as a function of MgO concentration in targets, annealing temperature and heating/cooling rate during annealing was studied. The films deposited from 66 mol% MgO excess target showed good perovskite structure in this study. For film deposited from the target with 66mol% MgO excess content and post-annealed conventionally at 750°C for 10 minutes in oxygen flow, preferential (111) orientation of the perovskite phase and pyrochlore phase of less than 3% was observed. And the room temperature dielectric constant was 2500 at 1kHz. Dielectric and structural properties exhibited relaxor-like behavior. Excess MgO in PMN-PT was homogeneously precipitated and dispersed in grain and grain boundary. The number of MgO nano-particles increased with increasing MgO content in PMN-PT targets. English IEEE Relaxor behavior of MgO dispersed-Pb(Mg1/3Nb2/3)O3-PbTiO3 (90/10) nanocomposite thin films Conference 1 12th IEEE International Symposium on Applications of Ferroelectrics, pp.937 - 940 12th IEEE International Symposium on Applications of Ferroelectrics 937 940 US Honolulu, HI 2000-07-21 IEEE International Symposium on Applications of Ferroelectrics 2-s2.0-0034474419