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<dcvalue element="contributor" qualifier="author">김성일</dcvalue>
<dcvalue element="contributor" qualifier="author">김용태</dcvalue>
<dcvalue element="contributor" qualifier="author">김인수</dcvalue>
<dcvalue element="contributor" qualifier="author">김춘근</dcvalue>
<dcvalue element="contributor" qualifier="author">염민수</dcvalue>
<dcvalue element="contributor" qualifier="author">김영환</dcvalue>
<dcvalue element="date" qualifier="accessioned">2024-01-12T10:31:38Z</dcvalue>
<dcvalue element="date" qualifier="available">2024-01-12T10:31:38Z</dcvalue>
<dcvalue element="date" qualifier="issued">2007-12-11</dcvalue>
<dcvalue element="identifier" qualifier="uri">https:&#x2F;&#x2F;pubs.kist.re.kr&#x2F;handle&#x2F;201004&#x2F;84514</dcvalue>
<dcvalue element="title" qualifier="none">AlN&#x20;열방출층&#x20;및&#x20;TiN&#x20;전극이&#x20;적용된&#x20;상변화&#x20;메모리</dcvalue>
<dcvalue element="type" qualifier="none">Patent</dcvalue>
<dcvalue element="date" qualifier="registration">2007-12-11</dcvalue>
<dcvalue element="date" qualifier="application">2005-11-08</dcvalue>
<dcvalue element="identifier" qualifier="patentRegistrationNumber">7,307,269</dcvalue>
<dcvalue element="identifier" qualifier="patentApplicationNumber">11&#x2F;270711</dcvalue>
<dcvalue element="publisher" qualifier="country">US</dcvalue>
<dcvalue element="type" qualifier="iprs">특허</dcvalue>
<dcvalue element="contributor" qualifier="assignee">한국과학기술연구원</dcvalue>
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