Choi, W.J. Yi, H.T. Woo, D.H. Lee, S. Kim, S.H. Kang, K.N. Cho, J. 2024-01-12T10:40:21Z 2024-01-12T10:40:21Z 2022-03-07 1999-11 0272-9172 https://pubs.kist.re.kr/handle/201004/84874 The dependence of impurity free vacancy disordering (IFVD) of InGaAs/InGaAsP QW structure on the characteristics of dielectric capping layer was studied using SiNx film as capping layers. The characteristics of the SiNx capping layer were varied by changing the NH3 flow rate during SiNx deposition by plasma enhanced chemical vapor deposition (PECVD). The degree of quantum well intermixing (QWI) with SiNx capping layer grown at higher NH3 flow rate was larger than that with SiNx film grown at lower NH3 flow rate. This implies that QWI can be easily controlled by simply changing the reactive gas ratio in the growing process of SiNx capping layer. It was also shown that this method to control QWI is better than the method of using two different capping layers such as SiNx film and SiO2 film in order to get spatially selective QWI on the same substrate. English Materials Research Society Control of the intermixing of InGaAs/InGaAsP quantum well in impurity free vacancy disordering by changing NH3 flow rate during the growth of SiNx capping layer Conference 1 The 1999 MRS Fall Meeting - Symposium OO 'Infrared Applications of Semiconductors III', pp.515 - 518 The 1999 MRS Fall Meeting - Symposium OO 'Infrared Applications of Semiconductors III' 515 518 US Boston, MA, USA 1999-11-29 Materials Research Society Symposium - Proceedings 2-s2.0-0033725416