Kim, Yong Tae 2024-01-12T11:09:27Z 2024-01-12T11:09:27Z 2022-01-14 1998-07-01 https://pubs.kist.re.kr/handle/201004/85401 Enhancement of memory window in the metal/ferroelectric/insulator/semiconductor field effect transitor Conference 1 ECAPD IV '98/ISAF XI '98/Electroceramic VI '98, pp.0 ECAPD IV '98/ISAF XI '98/Electroceramic VI '98 0 0