Kim, E.K. Choi, W.Ch. Min, S.-K. Park, Ch.-Y. 2024-01-12T11:11:12Z 2024-01-12T11:11:12Z 2022-03-07 1997-12 0272-9172 https://pubs.kist.re.kr/handle/201004/85479 Nanocrystalline silicon (nc-Si) thin films were directly deposited by electron cyclotron resonance chemical vapor deposition (ECR-CVD) and ion beam assisted electron beam deposition (IBAED) method. In the sample deposited by ECR-CVD, the room temperature photoluminescence originated from the nc-Si and the silicon-hydrogen bond were appeared. It was confirmed that the size of the nc-Si could be controlled up to about 3 nm with the low substrate temperature during the deposition process and then the hydrogen atoms play a very important role in the formation of the nc-Si. The IBAED method was also found to an useful technique for nc-Si formation by the control of ion beam power. English Materials Research Society Formation of silicon nanocrystallites by electron cyclotron resonance chemical vapor deposition and ion beam assisted electron beam deposition Conference 1 1997 MRS Symposium, pp.231 - 236 1997 MRS Symposium 231 236 US Boston, MA, USA 1997-12-01 Materials Research Society Symposium - Proceedings 2-s2.0-0031634029