Lee, H.N. Shin, D.S. Kim, Y.T. Choh, S.H. 2024-01-12T11:11:33Z 2024-01-12T11:11:33Z 2022-03-07 1997-09 1930-8876 https://pubs.kist.re.kr/handle/201004/85495 Electrical properties of Pt/SrBi2Ta2O9/CeO2/Si structure have been investigated for the ferroelectric gate of non-volatile memory. Memory windows of the ferroelectric gate are in the range of 1∼2V corresponding to the thickness of SrBi2Ta2O9 films at the applied voltage of 6V. This memory window is strongly dependent upon not the remanent polarization but the coercive field intensity applied to the SrBi2Ta2O9. English IEEE Computer Society C-V characteristics of Pt/SrBi2Ta2O9/CeO2/Si structure for non-volatile memory devices Conference 10.1109/ESSDERC.1997.194539 1 27th European Solid-State Device Research Conference, ESSDERC 1997, pp.756 - 759 27th European Solid-State Device Research Conference, ESSDERC 1997 756 759 US Stuttgart 1997-09-22 European Solid-State Device Research Conference 2-s2.0-84907529685