Jung, Jae Hoon Ju, Byeong Kwon Kim, Hoon Oh, Myung Hwan Chung, Suk Jae Jang, Jin 2024-01-12T11:11:40Z 2024-01-12T11:11:40Z 2022-03-07 1997-08 0000-0000 https://pubs.kist.re.kr/handle/201004/85500 We have studied on the enhancement of field emission characteristics by hydrogen-free N-doped diamond-like carbon (DLC) coating on Mo-tip field emitter arrays by a layer-by-layer technique using plasma enhanced chemical vapor deposition. The Spindt-type Molybdenum tip is used as a emission source without resistive layer on silicon substrate. The maximum emission current for each pixel was increased from 160 μA to 1520 μA by 20 nm N-doped DLC coating Furthermore, the emission current from DLC coated FEAs is more stable than that of non-coated FEAs. English IEEE Effect of N doping on the electron emission properties of DLC film on 2-inch Mo FEAs panel Conference 1 1997 10th International Vacuum Microelectronics Conference, IVMC'97, pp.276 - 280 1997 10th International Vacuum Microelectronics Conference, IVMC'97 276 280 US Kyongju 1997-08-17 Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC 2-s2.0-0031339347