Ju, B.-K. Lee, D.-J. Choi, W.-B. Lee, Y.-H. Jang, J. Lee, K.-B. Oh, M.-H. 2024-01-12T11:12:32Z 2024-01-12T11:12:32Z 2022-03-07 1997-03 0277-786X https://pubs.kist.re.kr/handle/201004/85539 This paper presents the process and experimental results for the improved silicon-to-glass bonding using silicon direct bonding (SDB) followed by anodic bonding. The initial bonding between glass and silicon was caused by the hydrophilic surfaces of silicon-glass ensemble using SDB method. Then the initially bonded specimen had be to strongly bonded by anodic bonding process. The effects of the bonding process parameters on the interface energy were investigated as functions of the bonding temperature and voltage. We found that the specimen which was bonded using SDB process followed by anodic bonding process had higher interface energy than one using anodic bonding process only. The main factor contributing to the higher interface energy in the glass-to-silicon assemble bonded by SDB followed by anodic bonding was investigated by secondary ion mass spectroscopy (SIMS) analysis. ？ 1997 SPIE. All rights reserved. English International Society for Optical Engineering Modified low-temperature direct bonding method for vacuum microelectronics application Conference 10.1117/12.276625 1 Smart Structures and Materials 1997: Smart Electronics and MEMS, pp.342 - 348 Smart Structures and Materials 1997: Smart Electronics and MEMS 342 348 US San Diego 1997-03-03 Proceedings of SPIE - The International Society for Optical Engineering 2-s2.0-85076948691