CHOI, WOO BEOM Ju, B.-K. Lee, Y.-H. Oh, M.-H. Sung, M.-Y. 2024-01-12T11:12:35Z 2024-01-12T11:12:35Z 2022-03-07 1997-03 0277-786X https://pubs.kist.re.kr/handle/201004/85541 We performed silicon-to-In203:Sn coated glass bonding using anodic bonding process. Corning #7740 glass layer was deposited on In203:Sn coated glass by electron beam evaporation. It was confirmed that the composition of the deposited glass layer was nearly same as that of the bulk Corning #7740 glass plate using Auger electron spectroscopy (AES). In this work, silicon and In203:Sn coated glass with the deposited glass layer can be bonded at 190°C with an applied voltage of 6OVDC. In order to study the role of sodium ion, firstly, the bonding kinetics are modeled as resulting from the transport of sodium ions through the surface of the deposited glass layer. Secondary, the results of secondary ion mass spectroscopy (SIMS) analysis were used to confirm the modeled bonding kinetics of silicon-to-In203:Sn coated glass. This process can be applied for the vacuum packaging of microelectronic devices such as field emission display (FED). ？ 1997 SPIE. All rights reserved. English International Society for Optical Engineering Anodic bonding technique for silicon-to-ITO coated glass bonding Conference 10.1117/12.276624 1 Smart Structures and Materials 1997: Smart Electronics and MEMS, pp.336 - 341 Smart Structures and Materials 1997: Smart Electronics and MEMS 336 341 US San Diego 1997-03-03 Proceedings of SPIE - The International Society for Optical Engineering 2-s2.0-85076997303