Kim, Tae Geun Kim, Eun Kyu Son, Chang-Sik Kim, Seong-Il Jeong, Jichai Min, Suk-Ki Leem, Si-Jong Jun, Jong Il Lee, Hae Wang Park, Jung-Ho Seong, Tae-Yeon Jun, Sung Won 2024-01-12T11:38:14Z 2024-01-12T11:38:14Z 2022-03-07 1996-11 1092-8081 https://pubs.kist.re.kr/handle/201004/85891 Semiconductor quantum wire (QWR) diode lasers incorporating a p-n junction blocking layer between buffer layers instead of proton implantation is reported. A schematic diagram of the proposed laser structure is presented. A n-GaAs buffer and a 2-μm-thick p-GaAs layer for current blocking were grown on (100) GaAs substrates. The structure and optical properties of the QWR were investigated using transmission electron microscopy and low temperature photoluminescence (PL). An output power of 11.8 mW from some quantum wire laser array (QWLA) was observed, as well as threshold currents as low as 228 mA. The differential quantum efficiency for the devices with high power output exceeded 20% and the lasing wavelength was 826 nm. English IEEE Lasing characteristics of GaAs/AlGaAs quantum wire laser and its array with an effective p-n junction current blocking layer Conference 10.1109/LEOS.1996.565265 1 1996 9th Annual Meeting of IEEE Lasers and Electro-Optics Society, LEOS'96. Part 1 (of 2), pp.326 - 327 1996 9th Annual Meeting of IEEE Lasers and Electro-Optics Society, LEOS'96. Part 1 (of 2) 326 327 US Boston 1996-11-18 Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS 2-s2.0-0030380464