Ju, Byeong Kwon Kim, Seong-Jin Lee, Yun Hi Park, Beom Soo Baik, Young-Joon Lim, Sungkyoo Oh, Myung Hwan 2024-01-12T11:38:57Z 2024-01-12T11:38:57Z 2022-03-07 1996-07 0000-0000 https://pubs.kist.re.kr/handle/201004/85923 Diamond-tip field emitter arrays and a flat diamond films were fabricated and characterized. The tip radius of 300 angstroms was obtained by using a silicon mold formed by orientation dependent etching (ODE). The fabricated diamond-tip array was identified as diamond from Raman spectroscopy. Emission current of 200 μA and threshold voltage of 600 V were obtained for the diamond-tip field emitter arrays from the current-voltage measurement. Emission current of 6 μA and threshold voltage of 800 V were obtained from the flat diamond film deposited under the same condition as diamond-tip field emitter arrays. The diamond-tip field emitter arrays were shown to have better electrical characteristics than the flat diamond films. English IEEE Characterization of CVD diamond film and diamond-tip field emitter array for FED applications Conference 1 1996 9th International Vacuum Microelectronics Conference, IVMC, pp.530 - 533 1996 9th International Vacuum Microelectronics Conference, IVMC 530 533 US St.Petersburg, Russia 1996-07-07 Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC 2-s2.0-0030365115