Kim, Yong Tae 2024-01-12T11:40:23Z 2024-01-12T11:40:23Z 2022-01-14 1995-07-01 https://pubs.kist.re.kr/handle/201004/85986 The properties of nitrogen implanted tungsten diffusion barrier for Cu metallization Conference 1 Proc. of the 2nd Korea-China Symp. on Ion Beam Modification of Materials and Thin Film Materials, pp.0 Proc. of the 2nd Korea-China Symp. on Ion Beam Modification of Materials and Thin Film Materials 0 0