Hyeong rak Lim Kim Seong Kwang Jae-Hoon Han Shim Jae Phil Subin Lee Kim Hyung-jun Byeong-Kwon Ju Sanghyeon Kim 2024-01-12T12:41:28Z 2024-01-12T12:41:28Z 2021-09-29 https://pubs.kist.re.kr/handle/201004/87181 English 2.5~7, 강원 하이원리조트 Improvement on interfacial quality of Ge MOS Capacitor using RIE O2 plasma treatment Conference 2 한국반도체학술대회 한국반도체학술대회 KO