Dae-Young Jeon Tim Baldauf So Jeong Park Sebastian Pregl Larysa Baraban Gianaurelio Cuniberti Thomas Mikolajick Walter M. Weber 2024-01-12T13:09:56Z 2024-01-12T13:09:56Z 2021-09-29 2378-6558 https://pubs.kist.re.kr/handle/201004/87664 English 9.11~14, 벨기에 Schottky-barrier transistors TCAD ambipolar behavior activation energy map IV contour map null operation mechanism null transconductance In-depth electrical characterization of carrier transport in ambipolar Si-NW Schottky-barrier FETs Conference 1 Solid-State Device Research Conference (ESSDERC), pp.304 - 307 Solid-State Device Research Conference (ESSDERC) 304 307 US