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<dcvalue element="contributor" qualifier="author">최원준</dcvalue>
<dcvalue element="contributor" qualifier="author">강광남</dcvalue>
<dcvalue element="contributor" qualifier="author">김선호</dcvalue>
<dcvalue element="contributor" qualifier="author">이희택</dcvalue>
<dcvalue element="contributor" qualifier="author">이석</dcvalue>
<dcvalue element="contributor" qualifier="author">한일기</dcvalue>
<dcvalue element="contributor" qualifier="author">김회종</dcvalue>
<dcvalue element="contributor" qualifier="author">우덕하</dcvalue>
<dcvalue element="date" qualifier="accessioned">2024-01-12T13:36:33Z</dcvalue>
<dcvalue element="date" qualifier="available">2024-01-12T13:36:33Z</dcvalue>
<dcvalue element="date" qualifier="issued">2002-02-19</dcvalue>
<dcvalue element="identifier" qualifier="uri">https:&#x2F;&#x2F;pubs.kist.re.kr&#x2F;handle&#x2F;201004&#x2F;88129</dcvalue>
<dcvalue element="title" qualifier="none">양자우물　무질서화　기술에서　유전체－반도체　덮개층　조합에　의한　InGaAs&#x2F;InGaAsP양자우물　밴드갭의　조작방법</dcvalue>
<dcvalue element="type" qualifier="none">Patent</dcvalue>
<dcvalue element="date" qualifier="registration">2002-02-19</dcvalue>
<dcvalue element="date" qualifier="application">1999-10-12</dcvalue>
<dcvalue element="identifier" qualifier="patentRegistrationNumber">326773</dcvalue>
<dcvalue element="identifier" qualifier="patentApplicationNumber">99-44158</dcvalue>
<dcvalue element="publisher" qualifier="country">KO</dcvalue>
<dcvalue element="type" qualifier="iprs">특허</dcvalue>
<dcvalue element="contributor" qualifier="assignee">한국과학기술연구원</dcvalue>
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