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<dcvalue element="contributor" qualifier="author">쉬라즈</dcvalue>
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<dcvalue element="date" qualifier="accessioned">2024-01-12T17:00:11Z</dcvalue>
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<dcvalue element="date" qualifier="issued">2022-05-17</dcvalue>
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<dcvalue element="title" qualifier="none">금속이온&#x20;투과방지층을&#x20;함유한&#x20;고이온선택성&#x20;복합&#x20;고분자&#x20;전해질막&#x20;제조&#x20;기술&#x20;및&#x20;이를&#x20;이용한&#x20;레독스플로우&#x20;전지</dcvalue>
<dcvalue element="type" qualifier="none">Patent</dcvalue>
<dcvalue element="date" qualifier="registration">2022-05-17</dcvalue>
<dcvalue element="date" qualifier="application">2019-11-22</dcvalue>
<dcvalue element="identifier" qualifier="patentRegistrationNumber">11335931</dcvalue>
<dcvalue element="identifier" qualifier="patentApplicationNumber">16&#x2F;691610</dcvalue>
<dcvalue element="publisher" qualifier="country">US</dcvalue>
<dcvalue element="type" qualifier="iprs">특허</dcvalue>
<dcvalue element="contributor" qualifier="assignee">한국과학기술연구원</dcvalue>
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