Ey Goo Kang Eun Sik Jung Kim, Yong Tae 2024-01-12T20:06:46Z 2024-01-12T20:06:46Z 2021-09-29 https://pubs.kist.re.kr/handle/201004/95708 English IGBT power device Field stop Trench gate Electrical characteristics of IGBT using a field stop trench gate structure Conference 1 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2012), pp.12 - 15 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2012) 12 15 KO