Yeonghyeon Hwang Won-Ju Cho Kim, Yong Tae 2024-01-12T20:06:47Z 2024-01-12T20:06:47Z 2021-09-29 https://pubs.kist.re.kr/handle/201004/95709 English Diffusion barrier ALD WN surface treatment Comparison of thin film properties of WN diffusion barrier prepared by atomic layer deposition using metal organic and metal halide reactant gases Conference 1 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2012), pp.124 - 127 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2012) 124 127 KO