Kim, Yong Tae Ey Goo Kang Ho Jung Chang 2024-01-12T21:06:25Z 2024-01-12T21:06:25Z 2021-09-29 https://pubs.kist.re.kr/handle/201004/96800 English Optimal design power MOS GaN 600V Al2O3 gate oxide A study on the optimal design of 600V GaN power MOSFET using Al2O3 gate oxide Conference 1 Asia Pacific Interdisciplinary Research Conf.2011, pp.18pp-51 Asia Pacific Interdisciplinary Research Conf.2011 18pp-51 18pp-51 JA