Manipulation of electric field induced spin-orbit interaction parameter in double-sided doped InAs and In0.53Ga0.47As quantum well structures - 김경호; Kim Hyung-jun; Park Youn-Ho; Koo, Hyun Cheol; Chang, Joonyeon; Han, Suk Hee
Keywords: spin-orbit interaction; quantum well; spin-FET; internal potential asymmetry; Rashba effect; SdH oscillation; gate electric field