Absorption properties of the epitaxial Alx-Ga1-xN grown by plasma induced molecular beam epitaxy - Jewon Kim; SON CHANG-SIK; 심선일; 최인훈; PARK YOUNG KYUN; Kim Yong Tae; O. Ambacher; M. Stutzmann
Keywords: Absorption Properties; AlGaN; Gallium Nitride; molecular beam epitaxy