The characteristics of In0.52Al0.48As/In0.53Ga0.47As heterojunction bipolar transistors illuminated by laser - KIM JONG WOOK; 강현일; 오재응; KIM HWE JONG; Choi Won Jun; Lee Seok; Han Il Ki; Woo Deok Ha; Lee Jung Il; Kim Sun Ho; KANG KWANG NHAM
Keywords: HBT; InAlAs/InGaAs; 광특성