In-depth electrical characterization of carrier transport in ambipolar Si-NW Schottky-barrier FETs - Dae-Young Jeon; Tim Baldauf; So Jeong Park; Sebastian Pregl; Larysa Baraban; Gianaurelio Cuniberti; Thomas Mikolajick; Walter M. Weber (9.11~14, 벨기에)
Keywords: Schottky-barrier transistors; TCAD; ambipolar behavior; activation energy map; IV contour map; null; operation mechanism; null; transconductance