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    <title>DSpace Collection:</title>
    <link>https://pubs.kist.re.kr/handle/123456789/75358</link>
    <description />
    <pubDate>Wed, 15 Apr 2026 18:20:32 GMT</pubDate>
    <dc:date>2026-04-15T18:20:32Z</dc:date>
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      <title>Task-based compliance planning for multi-fingered robotic manipulations</title>
      <link>https://pubs.kist.re.kr/handle/201004/137991</link>
      <description>Title: Task-based compliance planning for multi-fingered robotic manipulations
Authors: Kim, BH; Yi, BJ; Oh, SR; Suh, IH
Abstract: Based on the analysis of the stiffness relation between the operational space and the fingertip space of multi-fingered hands, this paper provides a guideline of task-based compliance planning for multi-fingered robotic manipulations. In order to show the characteristics of the task-based stiffness matrix, various two- and three-dimensional examples are illustrated. Also, it is shown that some of the coupling stiffness elements cannot be planned arbitrarily due to grasping geometry. Through the analytical results, it is concluded that the operational stiffness matrix should be carefully specified by considering the location of the compliance center and the grasp geometry of multifingered hands for successful grasping and manipulation tasks.</description>
      <pubDate>Thu, 01 Jan 2004 00:00:00 GMT</pubDate>
      <guid isPermaLink="false">https://pubs.kist.re.kr/handle/201004/137991</guid>
      <dc:date>2004-01-01T00:00:00Z</dc:date>
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    <item>
      <title>Initiation and evolution of phase separation in GaP/InP short-period superlattices</title>
      <link>https://pubs.kist.re.kr/handle/201004/137990</link>
      <description>Title: Initiation and evolution of phase separation in GaP/InP short-period superlattices
Authors: Shin, B; Chen, W; Goldman, RS; Song, JD; Kim, JM; Lee, YT
Abstract: We have investigated the initiation and evolution of lateral phase separation in GaP/InP short-period superlattices (SPSs). Cross-sectional scanning tunneling microscopy reveals lateral contrast modulations within the SPS region, presumably due to alloy phase separation. The wavelength of the modulations appears to be constant throughout the entire SPS structure. Interestingly, the wavelength is dependent on the thickness of the constituent layers of the superlattice, and is likely to be affected by an observed significant concentration of group V vacancies. Together, these results suggest that phase separation is initiated by compositional nonuniformities from excess surface adatoms due to incomplete coverage of the constituent layers of the superlattice, and that the phase separation process is assisted by In-Ga interdiffusion via P vacancies. (C) 2004 American Vacuum Society.</description>
      <pubDate>Thu, 01 Jan 2004 00:00:00 GMT</pubDate>
      <guid isPermaLink="false">https://pubs.kist.re.kr/handle/201004/137990</guid>
      <dc:date>2004-01-01T00:00:00Z</dc:date>
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    <item>
      <title>Influence of semiconductor cap layer on the impurity-free vacancy disordering of the In0.2Ga0.8As/GaAs multiquantum-well structure by dielectric capping layers</title>
      <link>https://pubs.kist.re.kr/handle/201004/137989</link>
      <description>Title: Influence of semiconductor cap layer on the impurity-free vacancy disordering of the In0.2Ga0.8As/GaAs multiquantum-well structure by dielectric capping layers
Authors: Yu, JS; Song, JD; Kim, JM; Lee, YT; Lim, H
Abstract: The feasibility of normal GaAs, low-temperature-grown GaAs (LT-GaAs) and low-temperature-grown InGaAs (LT-InGaAs) as the capping layers for impurity-free vacancy disordering (IFVD) of the In0.2Ga0.8As/GaAs multiquantum-well (MQW) structure has been studied. The normal GaAs,LT-GaAs and LT-InGaAs layers were tested as the outermost capping layer and the intermediate cap layer underneath the SiO2 or Si3N4 capping layer. The degree of quantum-well intermixing (QWI) induced by rapid thermal annealing was estimated by the shift of the photoluminescence (PL) peak energy. It was found that the IFVD of the In0.2Ga0.8As/GaAs MQW structure using LT-GaAs (LT-InGaAs) as the outermost capping layer was much smaller ( larger) than that using a SiO2 ( Si3N4) capping layer. It was also observed that the insertion of the normal GaAs, LT-GaAs and LT-InGaAs cap layers below the SiO2 or Si3N4 capping layer reduces the degree of QWI and the PL intensity after the QWI. A plausible explanation for the influence of normal GaAs, LT-GaAs and LT-InGaAs cap layers for the QWI of the InGaAs/GaAs structure is also discussed.</description>
      <pubDate>Thu, 01 Jan 2004 00:00:00 GMT</pubDate>
      <guid isPermaLink="false">https://pubs.kist.re.kr/handle/201004/137989</guid>
      <dc:date>2004-01-01T00:00:00Z</dc:date>
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    <item>
      <title>Styrylquinazolines: A new class of inhibitors on prostaglandin E-2 production in lipopolysaccharide-activated macrophage cells</title>
      <link>https://pubs.kist.re.kr/handle/201004/137988</link>
      <description>Title: Styrylquinazolines: A new class of inhibitors on prostaglandin E-2 production in lipopolysaccharide-activated macrophage cells
Authors: Park, JH; Min, HY; Kim, SS; Lee, JY; Lee, SK; Lee, YS
Abstract: 4&amp;apos;-Dihydroxylated styrylquinazolines (2 a-c), 3&amp;apos;-hydroxylated styrylquinazolines 3&amp;apos;, (2 h, 2 i), and 3&amp;apos;-acetoxy-styrylquinazolines (2 j, 2 k) exhibited good inhibitory effects of PGE(2) production by COX-2 with a range of IC50 values of 1.19 similar to 3.56 muM. The potencies were comparable or better than that of the representative stilbene resveratrol (IC50 = 3.07 muM). These results indicate that styrylquinazolines can be considered as potential resveratrol analogues in the modulation of prostaglandin production by COX-2.</description>
      <pubDate>Thu, 01 Jan 2004 00:00:00 GMT</pubDate>
      <guid isPermaLink="false">https://pubs.kist.re.kr/handle/201004/137988</guid>
      <dc:date>2004-01-01T00:00:00Z</dc:date>
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