https://pubs.kist.re.kr/handle/123456789/75381 Wed, 15 Apr 2026 18:26:53 GMT 2026-04-15T18:26:53Z https://pubs.kist.re.kr/handle/201004/117639 Title: Noise characterization of a 10 GHz harmonically mode-locked fiber ring laser stabilized by cavity length control Authors: Jhon, YM; Jang, CW; Kim, JH; Byun, YT; Kim, SH Tue, 01 Jan 2002 00:00:00 GMT https://pubs.kist.re.kr/handle/201004/117639 2002-01-01T00:00:00Z https://pubs.kist.re.kr/handle/201004/117638 Title: Color and suspended solid removal with a novel coagulation technology Authors: Pak, D; Chang, W Abstract: A novel coagulation technology using atomized molten slag with ferrous sulfate has been developed to treat a turbid and colored water or wastewater. The atomized molten slag is produced by atomizing the molten slag from the steel-making process. The atomized molten slag has magnetic iron oxide in its constituent molecules so that it is magnetized. In this novel coagulation technology, the atomized molten slag acts as nuclei for coagulation process and weighting agent for the resultant floc. In this study, this new coagulation technology was compared with metal hydroxide flocs such as FeCl3 and PAC in treating textile wastewater. A batch settling test was conducted to investigate the settling characteristic of sludge formed with the atomized molten slag. The settling velocity of sludge formed with the atomized molten slag is almost ten times greater than that of sludge formed with FeCl3 or PAC. The coagulation using the atomized molten slag showed a higher removal rate of color, suspended solid, TOC, COD, TKN and T-P. The atomized molten slag is capable of adsorbing organic substance, ammonia and phosphate. This characteristic leads to higher removal rate than FeCl3 or PAC. The gel permeation chromatography of the wastewater treated using the atomized molten slag illustrated that this novel coagulation technology is more efficient in removing the particles with low molecular weight. The removal rates of color, suspended solid, COD, TOC, ammonia and phosphorous increase with increasing amount of atomized molten slag addition. Even though the atomized molten slag was overdosed, restabilization of particles was not encountered. Tue, 01 Jan 2002 00:00:00 GMT https://pubs.kist.re.kr/handle/201004/117638 2002-01-01T00:00:00Z https://pubs.kist.re.kr/handle/201004/117637 Title: Smart colonoscope system Authors: Kim, B; Jeong, Y; Lim, HY; Kim, TS; Park, JO; Dario, P; Menciassi, A; Choi, H Abstract: As changing the eating habit to low fiber and high fat diet, the pathology in the colon is growing up annually. Colonoscopy is an important medical procedure for the diagnosis of various diseases like cancer in the colon and rectum. But it requires much time for doctors to acquire a dexterous skill to Perform the operation of colonoscope and the procedure is painful and long to the patient in many cases. Therefore, some studies on the development of autonomous and more convenient colonoscope are carried out. In this paper, we propose a smart colonoscope system that has the locomotive function, active camera system, and human-friendly user interface besides the basic functions of the conventional colonoscope system. Doctors will be able to concentrate on the diagnosis itself with this system. Vie dexterity required to doctors and the pains imposed to patients will also be reduced with this system. The concept and each component of the smart colonoscope system are described in this paper We carried out in-vitro test to evaluate its validity. Tue, 01 Jan 2002 00:00:00 GMT https://pubs.kist.re.kr/handle/201004/117637 2002-01-01T00:00:00Z https://pubs.kist.re.kr/handle/201004/117636 Title: SWIR diodes of HgCdTe on GaAs substrates grown by metal organic vapor phase epitaxy Authors: Kim, JS; An, SY; Suh, SH Abstract: We report the growth of short wave infrared (SWIR) HgCdTe on (001) GaAs by metal organic vapor phase epitaxy (MOVPE). KOH dissolved in water used as final substrate rinse produce a mirror - like surface and with a hillock density of less than 10cm(-2). It is shown that K element diffuses during layer growth and heat treatment for metal vacancy filling from the GaAs substrate/buffer interface into the MCT with a surface concentration of around low 10(15)cm(-3). The transport properties of undoped MCT layers are dominated by residual K element in the layer. Short wave infrared (SWIR) photovoltaic devices have been fabricated from non p HgCdTe films on GaAs substrates. The MOVPE grown films were processed into mesa type discrete devices with wet chemical etching employed for mesa delineation and ZnS surface passivation. The photodiode forward and reverse current-voltage characteristics, as well as the temperature dependence of the zero-bias dynamic resistance, were measured in the temperature range of 200-300 K. The zero bais dynamic resistance-area product at 200K and 300K were 5x10(5) and 3.0x10(2) ohm-cm(2), respectively. The relative spectral response cut off wavelength of device at 300K was 2.5mum. Tue, 01 Jan 2002 00:00:00 GMT https://pubs.kist.re.kr/handle/201004/117636 2002-01-01T00:00:00Z