Spin Precession and Spin­Charge Conversion in a Strong Rashba Channel at Room Temperature
- Spin Precession and Spin­Charge Conversion in a Strong Rashba Channel at Room Temperature
- 장준연; 구현철; 김형준; 전지훈; 김성빈
- Rashba effect; Spin Hall effect; Two­dimensional electron gas; Spin transistor
- Issue Date
- Electronic materials letters
- VOL 17-330
- The detection of spin current injected from the ferromagnet source to the semiconductor channel is very challenging due to the low injection efciency at the interface. Especially, it is difcult to detect the spin precession signal in a strong Rashba system without a signal decay. In a semiconductor system, the spin Hall angle is much larger than the spin injection efciency, so the spin Hall efect is utilized for room temperature operation of the semiconductor-based Rashba devices. To realize spin transport device induce by the spin-charge and charge-spin conversions, the direct spin Hall efect (DSHE) and the inverse spin Hall efect (ISHE) are adopted, respectively. The spin current is clearly detected up to room temperature and the spin transport signal agrees to the temperature dependence of the Rashba efect. From these spin transport signals, we suggest another option to extract Rashba parameters from cryogenic temperature to room temperature. The both signals of DSHE and ISHE also confrm the Onsager Reciprocity in a Rashba system.
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