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Threshold voltage shift of solution processed InGaZnO thin film transistors with indium composition ratio

Other Titles

용액 공정으로 제작된 InGaZnO TFT의 인듐 조성비에 따른 문턱전압 변화

Authors

Park ki ho; Lee Deuk-Hee; Dong Yun Lee; Byeong-Kwon Ju; Lee Sang Yeol

Citation

전기전자재료학회 하계학술대회, pp.3

Keywords

threshold voltage (Vth); indium-gallium-zinc oxide (IGZO); thin film transistors (TFTs)

URI

https://pubs.kist.re.kr/handle/201004/100176

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KIST Conference Paper > Others

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