A design of Novel IGBT with Oblique Trench Gate

Authors
Oh JuhyunChun DaehwanLee Eui-BokKim, Young-HwanKIM, CHUN KEUNByeong Kwon JuMan Young SungKim, Yong Tae
Citation
2010 Asia-Pacific Workshop on fundamentals and Applications of Advanced Semiconductor Devices, v.110, no.110, pp.57 - 59
Keywords
Trench IGBT; Breakdown voltage; Electric field distribution
URI
https://pubs.kist.re.kr/handle/201004/100192
Appears in Collections:
KIST Conference Paper > Others
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