DSpace at KISTKIST Conference PaperOthers

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dc.contributor.authorYoungchae, Yoo-
dc.contributor.authorHan, Il Ki-
dc.contributor.authorLee, Jung Il-
dc.contributor.author이주인-
dc.contributor.author김은규-
dc.date.accessioned2024-01-13T00:33:12Z-
dc.date.available2024-01-13T00:33:12Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/100513-
dc.languageEnglish-
dc.subject양자점-
dc.subject고휘도 발광소자-
dc.subjecttrench structure-
dc.subjectsemiconductors-
dc.titleCharacteristics of InAs quantum dot superluminescent diodes utilizing trench structures-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationISDRS-
dc.citation.titleISDRS-
dc.citation.conferencePlaceUS-
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