Material and electrical properties of Ge-Bi-Te alloy for low power consuming phase-change random access memory

Authors
Kim, Yong TaeYoum MinsooMan Young Sung
Citation
E-MRS 2008 spring meeting
Keywords
Ge-Bi-Te; PRAM
URI
https://pubs.kist.re.kr/handle/201004/102606
Appears in Collections:
KIST Conference Paper > Others
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